Crossbar Nanoscale HfO2-Based Electronic Synapses
نویسندگان
چکیده
منابع مشابه
Crossbar Nanoscale HfO2-Based Electronic Synapses
Crossbar resistive switching devices down to 40 × 40 nm(2) in size comprising 3-nm-thick HfO2 layers are forming-free and exhibit up to 10(5) switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions, thus emulating long-term potentiation/depression properties akin to biological synapses. Both forming-free and gradual switching properties are mod...
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Although ZrO2 and HfO2 are, for the most part, quite similar chemically, subtle differences in their electronic structures appear to be responsible for differing MO2/Si (M = Zr, Hf) interface stabilities. To shed light on the electronic structure differences between ZrO2 and HfO2, we have conducted joint experimental and theoretical studies. Because molecular electron affinities are a sensitive...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2016
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-016-1360-6